Part Number Hot Search : 
RLZ33B PE9404 KSP2222A MJ411 HD74LS32 2SA1403 H08A60 MV571
Product Description
Full Text Search
 

To Download ACE4922 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ace 4922 dual n - channel enhancement mode mosfet ver 1. 3 1 description the ace 4922 is the dual n - channel enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance and provide superi or switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high - side switching, low in - line power loss, and resistance to transients are n eeded. features ? n - channel 20 v/ 0.95 a, r ds(on) = 3 80m@v gs =4.5v 20 v/ 0.75 a, r ds(on) = 45 0m@v gs = 2 .5v 20 v/ 0.65 a, r ds(on) = 80 0m@v gs = 1.8 v ? super high density cell design for extremely low r ds(on) ? exceptional on - resistance and maximum dc current capability applicati on ? power management in note book ? portable equipment ? battery powered system ? dc/dc converter ? load switch ? dsc ? lcd display inverter absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v dss 2 0 v gate - source voltage v gss 20 v continuou s drain current (t j =150 ) t a =25 i d 1.2 a t a = 8 0 0.9 pulsed drain current i dm 4 a continuous source current (diode conduction) i s 0 .6 a power dissipation t a =25 p d 0.35 w t a =70 0.19 operating junction temperature t j - 55/150 o c storage temperature range t stg - 55/150 o c
ace 4922 dual n - channel enhancement mode mosfet ver 1. 3 2 packaging type s c - 70 - 6 6 5 4 1 2 3 n - channel n - channel ordering i nformation ace 4922 xx + h s c - 7 0 - 6 description 1 source 1 2 gate 1 3 drain 2 4 source 2 5 gate 2 6 drain 1 h m : s c - 70 - 6 pb - free halogen - free
ace 4922 dual n - channel enhancement mode mosfet ver 1. 3 3 electrical characteristics t a =25 , unless otherwise noted . parameter symbol conditions min. typ. max. unit static drain - source breakdown voltage v (br)dss v gs =0v, i d =250 ua 20 v gate threshold voltage v gs(th) v d =vgs, i d =250ua 0. 3 5 1. 0 gate leakage current i gss v ds =0v,v gs = 12 v 100 na zero gate voltage drain current i dss v ds =2 0 v, v gs =0v 1 ua v ds = 2 0 v, v gs =0v t j = 5 5 5 on - state drain current i d(on) v ds R 4.5 v, v gs = 5 v 0 . 7 a drain - source on - resistance r ds(on) v gs = 4.5 v, i d = 0.95 a 0.26 0.38 v gs = 2.5 v, i d = 0.75 a 0.32 0. 45 v gs = 1.8 v, i d = 0.65 a 0.42 0.80 forward transconductance g fs v ds = 10 v,i d = 0.4 a 1 . 0 s diod e forward voltage v sd i s = 0. 1 5 a, v gs =0v 0.8 1.2 v dynamic total gate charge q g v ds =1 0 v, v gs = 4.5 v, i d = 0. 6 a 1.2 1.5 nc gate - source charge q gs 0.2 gate - drain charge q gd 0.3 turn - on time td(on) v dd = 10 v, r l = 10 , i d = 0 . 5 a, v gen = 4.5 v, r g =6 5 10 ns tr 8 15 turn - off time td(off) 10 18 tf 1.2 2.8
ace 4922 dual n - channel enhancement mode mosfet ver 1. 3 4 typical performance characteristics output characte ristics transfer characteristics v ds - drain - to - source voltage (v) v gs - gate - to - source voltage (v) on - resistance vs. drain current capacitance i d - drain current (a) v d s - drain - to - sourc e voltage (v) gate charge on - resistance vs. junction temperature q g - total gate charge (nc) t j - junction temperature ( )
ace 4922 dual n - channel enhancement mode mosfet ver 1. 3 5 typical performance characteristics source - drain diode forward voltage on - resistance vs. gate - to - source voltage v sd - source - to - drain voltage (v) v gs - gate - to - source voltage (v) threshold voltage single pulse power , junct ion - to - ambient t j - temperature( ) time (sec) normalized thermal transient impedan ce, junction - to - foot square wave pulse duration ( s ec)
ace 4922 dual n - channel enhancement mode mosfet ver 1. 3 6 packing information sc - 70 - 6
ace 4922 dual n - channel enhancement mode mosfet ver 1. 3 7 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perfor m when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perfo rm can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/


▲Up To Search▲   

 
Price & Availability of ACE4922

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X